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SK Hynix HMT31GR7CFR4C-PB 8GB
Samsung M471A1K43CBCBCRC 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB vs Samsung M471A1K43CBCBCRC 8GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

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Samsung M471A1K43CBCBCRC 8GB

Samsung M471A1K43CBCBCRC 8GB

Differenze Specifiche tecniche Commenti

Differenze

SK Hynix HMT31GR7CFR4C-PB 8GB Motivi da considerare
SK Hynix HMT31GR7CFR4C-PB 8GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    9.8 left arrow 9.3
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    8.2 left arrow 6.1
    Valore medio nei test
Samsung M471A1K43CBCBCRC 8GB Motivi da considerare
Samsung M471A1K43CBCBCRC 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    38 left arrow 51
    Intorno -34% latenza inferiore
  • Larghezza di banda di memoria superiore, mbps
    19200 left arrow 12800
    Intorno 1.5 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
SK Hynix HMT31GR7CFR4C-PB 8GB
Samsung M471A1K43CBCBCRC 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR4
  • Latenza in PassMark, ns
    51 left arrow 38
  • Velocità di lettura, GB/s
    9.8 left arrow 9.3
  • Velocità di scrittura, GB/s
    8.2 left arrow 6.1
  • Larghezza di banda della memoria, mbps
    12800 left arrow 19200
Other
  • Descrizione
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Classifica PassMark (più sono, meglio è)
    2182 left arrow 1493

SK Hynix HMT31GR7CFR4C-PB 8GB Confronto tra le RAM

Hynix Semiconductor (Hyundai Electronics) HMT31GR7CFR4C-PB 8GB
Corsair CMY8GX3M2A2666C10 4GB

Samsung M471A1K43CBCBCRC 8GB Confronto tra le RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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