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SK Hynix HMT425S6CFR6A-PB 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

SK Hynix HMT425S6CFR6A-PB 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

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SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Punteggio complessivo
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Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Differenze Specifiche tecniche Commenti

Differenze

SK Hynix HMT425S6CFR6A-PB 2GB Motivi da considerare
SK Hynix HMT425S6CFR6A-PB 2GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    10.1 left arrow 7.8
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    7.1 left arrow 6.1
    Valore medio nei test
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Segnala un bug
  • Larghezza di banda di memoria superiore, mbps
    17000 left arrow 12800
    Intorno 1.33 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
SK Hynix HMT425S6CFR6A-PB 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR4
  • Latenza in PassMark, ns
    41 left arrow 41
  • Velocità di lettura, GB/s
    10.1 left arrow 7.8
  • Velocità di scrittura, GB/s
    7.1 left arrow 6.1
  • Larghezza di banda della memoria, mbps
    12800 left arrow 17000
Other
  • Descrizione
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Classifica PassMark (più sono, meglio è)
    1484 left arrow 1512

SK Hynix HMT425S6CFR6A-PB 2GB Confronto tra le RAM

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Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB Confronto tra le RAM

Samsung M3 78T5663RZ3-CE6 2GB
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RAM Latency Calculator
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