TwinMOS 8DPT5MK8-TATP 2GB vs Samsung M378A1K43EB2-CWE 8GB

Punteggio complessivo

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Punteggio complessivo

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Differenze Specifiche tecniche Commenti

Differenze

TwinMOS 8DPT5MK8-TATP 2GB

Motivi da considerare
TwinMOS 8DPT5MK8-TATP 2GB

Velocità di lettura più elevata, GB/s

3 17.6

Valore medio nei test

Samsung M378A1K43EB2-CWE 8GB

Motivi da considerare
Samsung M378A1K43EB2-CWE 8GB

Al di sotto della latenza nei test PassMark, ns

33 53

Intorno -61% latenza inferiore
Velocità di scrittura più elevata, GB/s

12.0 1,590.1

Valore medio nei test
Larghezza di banda di memoria superiore, mbps

25600 6400

Intorno 4 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

TwinMOS 8DPT5MK8-TATP 2GB

Samsung M378A1K43EB2-CWE 8GB

Caratteristiche principali

Tipo di memoria

DDR2 DDR4
Latenza in PassMark, ns

53 33
Velocità di lettura, GB/s

3,726.4 17.6
Velocità di scrittura, GB/s

1,590.1 12.0
Larghezza di banda della memoria, mbps

6400 25600

Other

Descrizione

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Temporizzazioni / Velocità di clock

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Classifica PassMark (più sono, meglio è)

522 2910

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

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