RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Selezionare la RAM 1
Selezionare la RAM 2
Confronto
DDR2 Elenco RAM
Tutti i moduli di memoria, ordinati in base alla latenza crescente
№
Larghezza di banda
Latenza, ns
Velocità di lettura, GB/s
Velocità di scrittura, GB/s
№
181
RAM
SK Hynix HYMP112U72CP8-S6 1GB
Latency
46
Read speed
5,577.2
Write speed
2,404.8
№
182
RAM
DATARAM 2GB
Latency
46
Read speed
5,124.7
Write speed
2,114.3
№
183
RAM
Transcend Information TX1066QLU-4GK 2GB
Latency
46
Read speed
5,805.9
Write speed
2,706.3
№
184
RAM
Kreton Corporation 515233220581351400 1GB
Latency
46
Read speed
5,245.9
Write speed
2,021.5
№
185
RAM
OCZ OCZ2V8002G 2GB
Latency
46
Read speed
4,789.6
Write speed
1,823.3
№
186
RAM
Kreton Corporation 516245525681452500 2GB
Latency
46
Read speed
5,637.0
Write speed
2,332.9
№
187
RAM
Samsung M3 78T2863CZS-CE6 1GB
Latency
46
Read speed
4,335.0
Write speed
1,793.7
№
188
RAM
SK Hynix HYMP512U64CP8-S6 1GB
Latency
46
Read speed
5,172.8
Write speed
2,089.4
№
189
RAM
A Force Manufacturing Ltd. 128X64M-80F 1GB
Latency
46
Read speed
5,168.8
Write speed
2,232.9
№
190
RAM
Samsung M3 78T3354BZ0-CCC 256MB
Latency
46
Read speed
2,909.8
Write speed
1,519.2
№
191
RAM
Catalyst 01GN66KFUA8 1GB
Latency
46
Read speed
3,688.8
Write speed
1,889.6
№
192
RAM
Patriot Memory (PDP Systems) PEP21G6400EL 1GB
Latency
46
Read speed
5,106.4
Write speed
1,681.4
№
193
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564U72BP8-C4 512MB
Latency
46
Read speed
4,508.5
Write speed
2,036.3
№
194
RAM
Patriot Memory (PDP Systems) PSD21G53381 1GB
Latency
46
Read speed
4,433.3
Write speed
1,974.7
№
195
RAM
Corsair CGM2X1G800 1GB
Latency
46
Read speed
5,249.4
Write speed
2,106.2
№
196
RAM
Samsung M3 78T6553BZ0-CD5 512MB
Latency
47
Read speed
3,367.9
Write speed
1,792.2
№
197
RAM
Micron Technology 8HTF12864AY-667J3C 1GB
Latency
47
Read speed
3,787.0
Write speed
1,773.4
№
198
RAM
Samsung M3 78T6553BZ3-CCC 512MB
Latency
47
Read speed
3,705.4
Write speed
1,641.5
№
199
RAM
Corsair CM2X512-6400C4 512MB
Latency
47
Read speed
5,158.1
Write speed
2,067.9
№
200
RAM
Samsung M3 78T6553CZ0-CD5 512MB
Latency
47
Read speed
3,399.3
Write speed
1,741.4
«
7
8
9
10
11
12
»
Ultimi confronti
G Skill Intl F4-3600C16-8GTZKK 8GB
Corsair CMK128GX4M8A2666C16 16GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-3000C16-8GSXFB 8GB
Kingston KF552C40-16 16GB
Kingston 9905712-035.A00G 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Smart Modular SMS4WEC8C1K0446FCG 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Team Group Inc. Team-Elite-1333 4GB
Kingston 9905625-097.A00G 16GB
Kingston 9905471-002.A00LF 2GB
Kingston MSI26D4S9S8ME-8 8GB
PNY Electronics PNY 2GB
Crucial Technology BLS8G4D26BFSB.16FE 8GB
Kingston 99U5584-004.A00LF 4GB
Mushkin MRA4S293MMMF32G 32GB
TwinMOS 8DHE3MN8-HATP 2GB
Vasekey M378A1K43BB2-CPB 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Kingston RB16D3LS1KBG/4G 4GB
G Skill Intl F4-2666C18-4GFX 4GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
Segnala un bug
×
Bug description
Source link
Русский 
English 
Español 
Português 
Deutsch 
Français 
Polski 
中文 
日本語 
