RAM
DDR5
DDR4
DDR3
DDR2
Über die Website
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Über die Website
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
RAM 1 auswählen
RAM 2 auswählen
Vergleichen Sie
DDR2 RAM-Liste
Alle Speichermodule, sortiert nach steigender Latenz
№
Bandbreite
Latenzzeit, ns
Lesegeschwindigkeit, GB/s
Schreibgeschwindigkeit, GB/s
№
181
RAM
SK Hynix HYMP112U72CP8-S6 1GB
Latency
46
Read speed
5,577.2
Write speed
2,404.8
№
182
RAM
DATARAM 2GB
Latency
46
Read speed
5,124.7
Write speed
2,114.3
№
183
RAM
Transcend Information TX1066QLU-4GK 2GB
Latency
46
Read speed
5,805.9
Write speed
2,706.3
№
184
RAM
Kreton Corporation 515233220581351400 1GB
Latency
46
Read speed
5,245.9
Write speed
2,021.5
№
185
RAM
OCZ OCZ2V8002G 2GB
Latency
46
Read speed
4,789.6
Write speed
1,823.3
№
186
RAM
Kreton Corporation 516245525681452500 2GB
Latency
46
Read speed
5,637.0
Write speed
2,332.9
№
187
RAM
Samsung M3 78T2863CZS-CE6 1GB
Latency
46
Read speed
4,335.0
Write speed
1,793.7
№
188
RAM
SK Hynix HYMP512U64CP8-S6 1GB
Latency
46
Read speed
5,172.8
Write speed
2,089.4
№
189
RAM
A Force Manufacturing Ltd. 128X64M-80F 1GB
Latency
46
Read speed
5,168.8
Write speed
2,232.9
№
190
RAM
Samsung M3 78T3354BZ0-CCC 256MB
Latency
46
Read speed
2,909.8
Write speed
1,519.2
№
191
RAM
Catalyst 01GN66KFUA8 1GB
Latency
46
Read speed
3,688.8
Write speed
1,889.6
№
192
RAM
Patriot Memory (PDP Systems) PEP21G6400EL 1GB
Latency
46
Read speed
5,106.4
Write speed
1,681.4
№
193
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564U72BP8-C4 512MB
Latency
46
Read speed
4,508.5
Write speed
2,036.3
№
194
RAM
Patriot Memory (PDP Systems) PSD21G53381 1GB
Latency
46
Read speed
4,433.3
Write speed
1,974.7
№
195
RAM
Corsair CGM2X1G800 1GB
Latency
46
Read speed
5,249.4
Write speed
2,106.2
№
196
RAM
Samsung M3 78T6553BZ0-CD5 512MB
Latency
47
Read speed
3,367.9
Write speed
1,792.2
№
197
RAM
Micron Technology 8HTF12864AY-667J3C 1GB
Latency
47
Read speed
3,787.0
Write speed
1,773.4
№
198
RAM
Samsung M3 78T6553BZ3-CCC 512MB
Latency
47
Read speed
3,705.4
Write speed
1,641.5
№
199
RAM
Corsair CM2X512-6400C4 512MB
Latency
47
Read speed
5,158.1
Write speed
2,067.9
№
200
RAM
Samsung M3 78T6553CZ0-CD5 512MB
Latency
47
Read speed
3,399.3
Write speed
1,741.4
«
7
8
9
10
11
12
»
Letzte Vergleiche
Kingston 9965433-406.A00LF 8GB
Crucial Technology CB4GU2400.M8E 4GB
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70DH0-CK0 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
TwinMOS 8DHE3MN8-HATP 2GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Corsair CMK32GX4M1A2400C16 32GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMSX64GX4M4A2400C16 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
Samsung M4 70T5663CZ3-CE6 2GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMK4GX4M1A2400C14 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2666C18-8GFT 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Heoriady HX2666CX15D4/4G 4GB
Kingston 9905403-011.A03LF 2GB
SK Hynix HMA82GR7AFR4N-TF 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avant Technology J642GU44J2320ND 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston 9965589-033.D00G 8GB
Einen Fehler melden
×
Bug description
Source link