A-DATA Technology VDQVE1B16 2GB vs Crucial Technology CT16G4DFD8213.C16FBD 16GB

総合得点

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

総合得点

Crucial Technology CT16G4DFD8213.C16FBD 16GB

Crucial Technology CT16G4DFD8213.C16FBD 16GB

相違点仕様コメント

相違点

A-DATA Technology VDQVE1B16 2GB

考慮すべき理由
A-DATA Technology VDQVE1B16 2GB

バグを報告する

読み出し速度の高速化、GB/s

4 15.9

テスト平均値
書き込み速度の高速化、GB/s

2,061.2 10.4

テスト平均値

Crucial Technology CT16G4DFD8213.C16FBD 16GB

考慮すべき理由
Crucial Technology CT16G4DFD8213.C16FBD 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

33 46

周辺 -39% 低遅延
より高いメモリ帯域幅、mbps

17000 6400

周辺 2.66 高帯域

仕様

技術仕様の完全リスト

A-DATA Technology VDQVE1B16 2GB

Crucial Technology CT16G4DFD8213.C16FBD 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

46 33
読み出し速度、GB/s

4,937.3 15.9
書き込み速度、GB/秒

2,061.2 10.4
メモリ帯域幅、mbps

6400 17000

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
タイミング / クロック速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

759 2847

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Crucial Technology CT16G4DFD8213.C16FBD 16GB

Crucial Technology CT16G4DFD8213.C16FBD 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT8G4DFRA32A.C8FP 8GB

Crucial Technology CT8G4DFRA32A.C8FP 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Corsair CM4X4GF2666C16K4 4GB

Corsair CM4X4GF2666C16K4 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3600C14-16GTZR 16GB

G Skill Intl F4-3600C14-16GTZR 16GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

Samsung M393A1K43BB0-CRC 8GB

Samsung M393A1K43BB0-CRC 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMT32GX4M4Z3200C16 8GB

Corsair CMT32GX4M4Z3200C16 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMAA2GS6AJR8N-XN 16GB

SK Hynix HMAA2GS6AJR8N-XN 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S13C9G 2GB

Kingston ACR256X64D3S13C9G 2GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Kingston KF548C38-16 16GB

Kingston KF548C38-16 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-4400C16-8GTZR 8GB

G Skill Intl F4-4400C16-8GTZR 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT51264BF1339J.M8F 4GB

Crucial Technology CT51264BF1339J.M8F 4GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology CT8G4DFS824A.C8FAD1 8GB

Crucial Technology CT8G4DFS824A.C8FAD1 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A