Corsair CMY16GX3M4A2133C8 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

総合得点

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

総合得点

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

相違点仕様コメント

相違点

Corsair CMY16GX3M4A2133C8 4GB

考慮すべき理由
Corsair CMY16GX3M4A2133C8 4GB

バグを報告する

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

考慮すべき理由
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

18 20

周辺 -11% 低遅延
読み出し速度の高速化、GB/s

20.4 17

テスト平均値
書き込み速度の高速化、GB/s

17.2 11.5

テスト平均値
より高いメモリ帯域幅、mbps

19200 10600

周辺 1.81 高帯域

仕様

技術仕様の完全リスト

Corsair CMY16GX3M4A2133C8 4GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

20 18
読み出し速度、GB/s

17.0 20.4
書き込み速度、GB/秒

11.5 17.2
メモリ帯域幅、mbps

10600 19200

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

3077 3814

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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