Corsair CMY8GX3M2A2666C10 4GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

総合得点

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

総合得点

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

相違点仕様コメント

相違点

Corsair CMY8GX3M2A2666C10 4GB

考慮すべき理由
Corsair CMY8GX3M2A2666C10 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

17 28

周辺 39% 低遅延
読み出し速度の高速化、GB/s

22.8 18.1

テスト平均値
書き込み速度の高速化、GB/s

15.4 14.8

テスト平均値

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

考慮すべき理由
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

バグを報告する

より高いメモリ帯域幅、mbps

17000 10600

周辺 1.6 高帯域

仕様

技術仕様の完全リスト

Corsair CMY8GX3M2A2666C10 4GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

17 28
読み出し速度、GB/s

22.8 18.1
書き込み速度、GB/秒

15.4 14.8
メモリ帯域幅、mbps

10600 17000

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 14 15 16
タイミング / クロック速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

3391 3564

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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