Crucial Technology CT51264BD160B.C16F 4GB vs Micron Technology 8ATF1G64HZ-2G3E2 8GB

総合得点

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

総合得点

Micron Technology 8ATF1G64HZ-2G3E2 8GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB

相違点仕様コメント

相違点

Crucial Technology CT51264BD160B.C16F 4GB

考慮すべき理由
Crucial Technology CT51264BD160B.C16F 4GB

バグを報告する

Micron Technology 8ATF1G64HZ-2G3E2 8GB

考慮すべき理由
Micron Technology 8ATF1G64HZ-2G3E2 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 41

周辺 -52% 低遅延
読み出し速度の高速化、GB/s

15.2 13.9

テスト平均値
書き込み速度の高速化、GB/s

11.7 9.7

テスト平均値
より高いメモリ帯域幅、mbps

19200 12800

周辺 1.5 高帯域

仕様

技術仕様の完全リスト

Crucial Technology CT51264BD160B.C16F 4GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

41 27
読み出し速度、GB/s

13.9 15.2
書き込み速度、GB/秒

9.7 11.7
メモリ帯域幅、mbps

12800 19200

Other

商品説明

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
タイミング / クロック速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2366 2537

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Crucial Technology CT8G4SFD824A.C16FADP 8GB

Crucial Technology CT8G4SFD824A.C16FADP 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3200C15-8GTZSK 8GB

G Skill Intl F4-3200C15-8GTZSK 8GB

Patriot Memory (PDP Systems) PSD22G6672 2GB

Patriot Memory (PDP Systems) PSD22G6672 2GB

Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Gold Key Technology Co Ltd NMSO432F82-3200E 32GB

Gold Key Technology Co Ltd NMSO432F82-3200E 32GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

SK Hynix HMA82GU6CJR8N-VK 16GB

SK Hynix HMA82GU6CJR8N-VK 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-2400C16-8GRS 8GB

G Skill Intl F4-2400C16-8GRS 8GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

SK Hynix HMA851U6CJR6N-UH 4GB

SK Hynix HMA851U6CJR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT16G4SFD824A.M16FR 16GB

Crucial Technology CT16G4SFD824A.M16FR 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

SK Hynix HMA425S6AFR6N-UH 2GB

SK Hynix HMA425S6AFR6N-UH 2GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Eudar Technology Inc. 8GXMP2666CL16 8GB

Eudar Technology Inc. 8GXMP2666CL16 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Kingston 9905702-008.A00G 8GB

Kingston 9905702-008.A00G 8GB