Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Micron Technology 4ATF1G64AZ-3G2E1 8GB

総合得点

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

総合得点

Micron Technology 4ATF1G64AZ-3G2E1 8GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

相違点仕様コメント

相違点

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

考慮すべき理由
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 33

周辺 18% 低遅延
書き込み速度の高速化、GB/s

11.8 10.9

テスト平均値

Micron Technology 4ATF1G64AZ-3G2E1 8GB

考慮すべき理由
Micron Technology 4ATF1G64AZ-3G2E1 8GB

バグを報告する

より高いメモリ帯域幅、mbps

25600 21300

周辺 1.2 高帯域

仕様

技術仕様の完全リスト

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

27 33
読み出し速度、GB/s

16.7 16.7
書き込み速度、GB/秒

11.8 10.9
メモリ帯域幅、mbps

21300 25600

Other

商品説明

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
タイミング / クロック速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
ランキングPassMark（多ければ多いほど良い）

2756 2876

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173BH0-YK0 4GB

Samsung M471B5173BH0-YK0 4GB

Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

Kingston KF3200C20S4/16G 16GB

Kingston KF3200C20S4/16G 16GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Samsung M378A5143DB0-CPB 4GB

Samsung M378A5143DB0-CPB 4GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Patriot Memory (PDP Systems) 2666 C18 Series 16GB

Patriot Memory (PDP Systems) 2666 C18 Series 16GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Team Group Inc. TEAMGROUP-UD4-4133 8GB

Team Group Inc. TEAMGROUP-UD4-4133 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Apacer Technology 78.CAGPN.AZ50C 8GB

Apacer Technology 78.CAGPN.AZ50C 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Crucial Technology BL16G32C16U4W.16FE 16GB

Crucial Technology BL16G32C16U4W.16FE 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CMR16GX4M2C3000C15 8GB

Corsair CMR16GX4M2C3000C15 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

G Skill Intl F4-2133C15-4GVR 4GB

G Skill Intl F4-2133C15-4GVR 4GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F4-3333C16-8GTZSW 8GB

G Skill Intl F4-3333C16-8GTZSW 8GB