Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Samsung M378A2K43EB1-CWE 16GB

総合得点

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

総合得点

Samsung M378A2K43EB1-CWE 16GB

Samsung M378A2K43EB1-CWE 16GB

相違点仕様コメント

相違点

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

考慮すべき理由
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 33

周辺 18% 低遅延

Samsung M378A2K43EB1-CWE 16GB

考慮すべき理由
Samsung M378A2K43EB1-CWE 16GB

バグを報告する

読み出し速度の高速化、GB/s

18.5 16.7

テスト平均値
書き込み速度の高速化、GB/s

13.8 11.8

テスト平均値
より高いメモリ帯域幅、mbps

25600 21300

周辺 1.2 高帯域

仕様

技術仕様の完全リスト

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M378A2K43EB1-CWE 16GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

27 33
読み出し速度、GB/s

16.7 18.5
書き込み速度、GB/秒

11.8 13.8
メモリ帯域幅、mbps

21300 25600

Other

商品説明

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
タイミング / クロック速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
ランキングPassMark（多ければ多いほど良い）

2756 3341

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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