Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

総合得点

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

総合得点

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

相違点仕様コメント

相違点

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

考慮すべき理由
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 29

周辺 7% 低遅延

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

考慮すべき理由
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

バグを報告する

書き込み速度の高速化、GB/s

13.5 11.8

テスト平均値

仕様

技術仕様の完全リスト

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

27 29
読み出し速度、GB/s

16.7 16.7
書き込み速度、GB/秒

11.8 13.5
メモリ帯域幅、mbps

21300 21300

Other

商品説明

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2756 3076

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Elpida EBE11UD8AJWA-6E-E 1GB

Elpida EBE11UD8AJWA-6E-E 1GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

SK Hynix HMA81GR7AFR8N-UH 8GB

SK Hynix HMA81GR7AFR8N-UH 8GB

Ramaxel Technology RMSA3270MB86H9F2400 4GB

Ramaxel Technology RMSA3270MB86H9F2400 4GB

Transcend Information AQD-D4U4GN21-SG 4GB

Transcend Information AQD-D4U4GN21-SG 4GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Crucial Technology BL16G32C16U4RL.M8FB1 16GB

Crucial Technology BL16G32C16U4RL.M8FB1 16GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

G Skill Intl F4-3466C18-8GTZRXB 8GB

G Skill Intl F4-3466C18-8GTZRXB 8GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

King Tiger Technology TMKG8G3000C17(XMP) 8GB

King Tiger Technology TMKG8G3000C17(XMP) 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Golden Empire CL18-20-20 D4-3200 8GB

Golden Empire CL18-20-20 D4-3200 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Kingston 9905624-004.A00G 4GB

Kingston 9905624-004.A00G 4GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Crucial Technology BLS8G4D32AESEK.M8FE 8GB

Crucial Technology BLS8G4D32AESEK.M8FE 8GB

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

Crucial Technology BLS8G4D26BFSEK.8FBR 8GB

Crucial Technology BLS8G4D26BFSEK.8FBR 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Kingston MSI24D4D4S8MB-8 8GB

Kingston MSI24D4D4S8MB-8 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Kingston MSI24D4U7S8MB-8 8GB

Kingston MSI24D4U7S8MB-8 8GB