Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB vs Samsung M471B1G73BH0-CK0 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB

総合得点

Samsung M471B1G73BH0-CK0 8GB

Samsung M471B1G73BH0-CK0 8GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

31 45

周辺 31% 低遅延
書き込み速度の高速化、GB/s

8.0 7.9

テスト平均値

Samsung M471B1G73BH0-CK0 8GB

考慮すべき理由
Samsung M471B1G73BH0-CK0 8GB

バグを報告する

読み出し速度の高速化、GB/s

12.1 11.3

テスト平均値

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB

Samsung M471B1G73BH0-CK0 8GB

主な特徴

メモリータイプ

DDR3 DDR3
PassMarkにおけるレイテンシー、ns

31 45
読み出し速度、GB/s

11.3 12.1
書き込み速度、GB/秒

8.0 7.9
メモリ帯域幅、mbps

12800 12800

Other

商品説明

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
タイミング / クロック速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
ランキングPassMark（多ければ多いほど良い）

2066 2054

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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