Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

バグを報告する

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

29 62

周辺 -114% 低遅延
読み出し速度の高速化、GB/s

12.2 7.4

テスト平均値
書き込み速度の高速化、GB/s

9.6 5.9

テスト平均値
より高いメモリ帯域幅、mbps

17000 10600

周辺 1.6 高帯域

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

62 29
読み出し速度、GB/s

7.4 12.2
書き込み速度、GB/秒

5.9 9.6
メモリ帯域幅、mbps

10600 17000

Other

商品説明

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
タイミング / クロック速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

1612 2443

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Panram International Corporation W4U3200PS-16G 16GB

Panram International Corporation W4U3200PS-16G 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

V-GEN D4H4GL26A8TS5 4GB

V-GEN D4H4GL26A8TS5 4GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Essencore Limited KD48GS88C-32N2200 8GB

Essencore Limited KD48GS88C-32N2200 8GB

Crucial Technology CT102464BF160B.16F 8GB

Crucial Technology CT102464BF160B.16F 8GB

Apacer Technology 78.CAGPN.DF40B 8GB

Apacer Technology 78.CAGPN.DF40B 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Corsair CMSO16GX4M2A2133C15 8GB

Corsair CMSO16GX4M2A2133C15 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Kingston 9905734-018.A00G 16GB

Kingston 9905734-018.A00G 16GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Samsung M471A4G43MB1-CTD 32GB

Samsung M471A4G43MB1-CTD 32GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Samsung M378A1K43BB2-CRC 8GB

Samsung M378A1K43BB2-CRC 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Corsair CMK8GX4M2A2666C16 4GB

Corsair CMK8GX4M2A2666C16 4GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

G Skill Intl F4-3200C16-8GSXKB 8GB

G Skill Intl F4-3200C16-8GSXKB 8GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

SK Hynix HMA851U6AFR6N-UH 4GB

SK Hynix HMA851U6AFR6N-UH 4GB