Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB vs SK Hynix HMT351S6CFR8C-PB 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB

総合得点

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

31 46

周辺 33% 低遅延
読み出し速度の高速化、GB/s

12 11.6

テスト平均値
書き込み速度の高速化、GB/s

8.6 8.0

テスト平均値

SK Hynix HMT351S6CFR8C-PB 4GB

考慮すべき理由
SK Hynix HMT351S6CFR8C-PB 4GB

バグを報告する

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

主な特徴

メモリータイプ

DDR3 DDR3
PassMarkにおけるレイテンシー、ns

31 46
読み出し速度、GB/s

12.0 11.6
書き込み速度、GB/秒

8.6 8.0
メモリ帯域幅、mbps

12800 12800

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
タイミング / クロック速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
ランキングPassMark（多ければ多いほど良い）

2066 1854

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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