Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CB8GS2400.C8JT 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

総合得点

Crucial Technology CB8GS2400.C8JT 8GB

Crucial Technology CB8GS2400.C8JT 8GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

24 35

周辺 31% 低遅延
書き込み速度の高速化、GB/s

12.5 12.3

テスト平均値

Crucial Technology CB8GS2400.C8JT 8GB

考慮すべき理由
Crucial Technology CB8GS2400.C8JT 8GB

バグを報告する

読み出し速度の高速化、GB/s

16.7 16

テスト平均値

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Crucial Technology CB8GS2400.C8JT 8GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

24 35
読み出し速度、GB/s

16.0 16.7
書き込み速度、GB/秒

12.5 12.3
メモリ帯域幅、mbps

19200 19200

Other

商品説明

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
タイミング / クロック速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2925 2933

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Crucial Technology BLT4G3D1337DT1TX0. 4GB

Crucial Technology BLT4G3D1337DT1TX0. 4GB

Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 9905734-003.A00G 32GB

Kingston 9905734-003.A00G 32GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology CT8G4SFD824A.M16FE1 8GB

Crucial Technology CT8G4SFD824A.M16FE1 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology BL8G32C16U4R.8FE 8GB

Crucial Technology BL8G32C16U4R.8FE 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Samsung M378A1K43BB2-CTD 8GB

Samsung M378A1K43BB2-CTD 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

A-DATA Technology DDR4 4133 2OZ 8GB

A-DATA Technology DDR4 4133 2OZ 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

G Skill Intl F4-2400C17-4GFT 4GB

G Skill Intl F4-2400C17-4GFT 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

A-DATA Technology DDR4 2800 2OZ 4GB

A-DATA Technology DDR4 2800 2OZ 4GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Mushkin MRA4S320GJJM16G 16GB

Mushkin MRA4S320GJJM16G 16GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB

Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology CT8G4SFD8213.C16FHP 8GB

Crucial Technology CT8G4SFD8213.C16FHP 8GB

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

Crucial Technology CT16G4SFD832A.C16FN 16GB

Crucial Technology CT16G4SFD832A.C16FN 16GB