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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT16G4SFRA32A.C8FB 16GB

総合得点
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

総合得点
star star star star star
Crucial Technology CT16G4SFRA32A.C8FB 16GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

相違点 仕様 コメント

相違点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
バグを報告する
  • PassMarkテストでのレイテンシー以下、ns
    24 left arrow 37
    周辺 35% 低遅延
  • 読み出し速度の高速化、GB/s
    16 left arrow 15.1
    テスト平均値
  • 書き込み速度の高速化、GB/s
    12.5 left arrow 12.3
    テスト平均値
Crucial Technology CT16G4SFRA32A.C8FB 16GB 考慮すべき理由
Crucial Technology CT16G4SFRA32A.C8FB 16GB
バグを報告する
  • より高いメモリ帯域幅、mbps
    25600 left arrow 19200
    周辺 1.33 高帯域

仕様

技術仕様の完全リスト
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
主な特徴
  • メモリータイプ
    DDR4 left arrow DDR4
  • PassMarkにおけるレイテンシー、ns
    24 left arrow 37
  • 読み出し速度、GB/s
    16.0 left arrow 15.1
  • 書き込み速度、GB/秒
    12.5 left arrow 12.3
  • メモリ帯域幅、mbps
    19200 left arrow 25600
Other
  • 商品説明
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • タイミング / クロック速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • ランキングPassMark（多ければ多いほど良い）
    2925 left arrow 2939

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAMの比較

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB RAMの比較

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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