Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 4ATF1G64AZ-3G2B1 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

総合得点

Micron Technology 4ATF1G64AZ-3G2B1 8GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

24 28

周辺 14% 低遅延
読み出し速度の高速化、GB/s

16 15.4

テスト平均値
書き込み速度の高速化、GB/s

12.5 10.3

テスト平均値

Micron Technology 4ATF1G64AZ-3G2B1 8GB

考慮すべき理由
Micron Technology 4ATF1G64AZ-3G2B1 8GB

バグを報告する

より高いメモリ帯域幅、mbps

25600 19200

周辺 1.33 高帯域

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

24 28
読み出し速度、GB/s

16.0 15.4
書き込み速度、GB/秒

12.5 10.3
メモリ帯域幅、mbps

19200 25600

Other

商品説明

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
タイミング / クロック速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
ランキングPassMark（多ければ多いほど良い）

2925 2892

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Team Group Inc. TEAMGROUP-UD4-2800 8GB

Team Group Inc. TEAMGROUP-UD4-2800 8GB

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Crucial Technology CT32G4DFD8266.C16FE 32GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

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Kingston ACR256X64D3S1333C9 2GB

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Samsung M393A1G40EB1-CRC 8GB

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Kingston KHX1600C9S3L/4G 4GB

Gold Key Technology Co Ltd GKE160SO102408-2666 16GB

Gold Key Technology Co Ltd GKE160SO102408-2666 16GB