Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 8ATF1G64HZ-2G3E2 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

総合得点

Micron Technology 8ATF1G64HZ-2G3E2 8GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

24 27

周辺 11% 低遅延
読み出し速度の高速化、GB/s

16 15.2

テスト平均値
書き込み速度の高速化、GB/s

12.5 11.7

テスト平均値

Micron Technology 8ATF1G64HZ-2G3E2 8GB

考慮すべき理由
Micron Technology 8ATF1G64HZ-2G3E2 8GB

バグを報告する

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

24 27
読み出し速度、GB/s

16.0 15.2
書き込み速度、GB/秒

12.5 11.7
メモリ帯域幅、mbps

19200 19200

Other

商品説明

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
タイミング / クロック速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2925 2537

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 8ATF1G64HZ-2G3E2 8GB

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Crucial Technology BLS8G4D30AESEK.M8FE 8GB

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G Skill Intl F4-3866C18-8GTZSW 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

Micron Technology 16ATF4G64AZ-3G2B1 32GB

Micron Technology 16ATF4G64AZ-3G2B1 32GB

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Kingston 9905403-444.A00LF 4GB

Kingston 9905630-051.A00G 16GB

Kingston 9905630-051.A00G 16GB

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Samsung M395T5160QZ4-CE66 2GB

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Panram International Corporation W4U2133PS-8G 8GB