Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 8ATF51264AZ-2G1A1 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

総合得点

Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

24 43

周辺 44% 低遅延
読み出し速度の高速化、GB/s

16 12.2

テスト平均値
書き込み速度の高速化、GB/s

12.5 9.7

テスト平均値
より高いメモリ帯域幅、mbps

19200 17000

周辺 1.13% 高帯域

Micron Technology 8ATF51264AZ-2G1A1 4GB

考慮すべき理由
Micron Technology 8ATF51264AZ-2G1A1 4GB

バグを報告する

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

24 43
読み出し速度、GB/s

16.0 12.2
書き込み速度、GB/秒

12.5 9.7
メモリ帯域幅、mbps

19200 17000

Other

商品説明

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
タイミング / クロック速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2925 2501

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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