Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

総合得点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

総合得点

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

24 27

周辺 11% 低遅延

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

考慮すべき理由
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

バグを報告する

読み出し速度の高速化、GB/s

17.4 16

テスト平均値
書き込み速度の高速化、GB/s

14.5 12.5

テスト平均値
より高いメモリ帯域幅、mbps

25600 19200

周辺 1.33 高帯域

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

24 27
読み出し速度、GB/s

16.0 17.4
書き込み速度、GB/秒

12.5 14.5
メモリ帯域幅、mbps

19200 25600

Other

商品説明

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
タイミング / クロック速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
ランキングPassMark（多ければ多いほど良い）

2925 3692

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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