Kingston 99U5595-005.A00LF 2GB vs Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

総合得点

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

総合得点

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

相違点仕様コメント

相違点

Kingston 99U5595-005.A00LF 2GB

考慮すべき理由
Kingston 99U5595-005.A00LF 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

26 75

周辺 65% 低遅延
書き込み速度の高速化、GB/s

7.3 7.1

テスト平均値

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

考慮すべき理由
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

バグを報告する

読み出し速度の高速化、GB/s

14.9 13.2

テスト平均値
より高いメモリ帯域幅、mbps

21300 10600

周辺 2.01 高帯域

仕様

技術仕様の完全リスト

Kingston 99U5595-005.A00LF 2GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

26 75
読み出し速度、GB/s

13.2 14.9
書き込み速度、GB/秒

7.3 7.1
メモリ帯域幅、mbps

10600 21300

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

1489 1763

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

CAS Latency (CL) *

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Absolute Latency

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最新の比較

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

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Corsair CMR16GX4M2C3466C16 8GB

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A-DATA Technology AM1U16BC4P2-B19H 4GB

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Crucial Technology CT8G4DFS824A.M8FE 8GB

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Samsung M393B2G70BH0-CK0 16GB

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