Micron Technology 16JSF25664HZ-1G1F1 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

総合得点

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

相違点仕様コメント

相違点

Micron Technology 16JSF25664HZ-1G1F1 2GB

考慮すべき理由
Micron Technology 16JSF25664HZ-1G1F1 2GB

バグを報告する

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

バグを報告する

読み出し速度の高速化、GB/s

12.2 10.5

テスト平均値
書き込み速度の高速化、GB/s

9.6 7.1

テスト平均値
より高いメモリ帯域幅、mbps

17000 8500

周辺 2 高帯域

仕様

技術仕様の完全リスト

Micron Technology 16JSF25664HZ-1G1F1 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

29 29
読み出し速度、GB/s

10.5 12.2
書き込み速度、GB/秒

7.1 9.6
メモリ帯域幅、mbps

8500 17000

Other

商品説明

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
タイミング / クロック速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

1425 2443

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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