Micron Technology 16JTF51264HZ-1G6M1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

総合得点

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

相違点仕様コメント

相違点

Micron Technology 16JTF51264HZ-1G6M1 4GB

考慮すべき理由
Micron Technology 16JTF51264HZ-1G6M1 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

28 36

周辺 22% 低遅延
読み出し速度の高速化、GB/s

12.9 9.1

テスト平均値
書き込み速度の高速化、GB/s

9.0 7.9

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

バグを報告する

より高いメモリ帯域幅、mbps

17000 12800

周辺 1.33 高帯域

仕様

技術仕様の完全リスト

Micron Technology 16JTF51264HZ-1G6M1 4GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

28 36
読み出し速度、GB/s

12.9 9.1
書き込み速度、GB/秒

9.0 7.9
メモリ帯域幅、mbps

12800 17000

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 13 15 18 21 22
タイミング / クロック速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2112 2090

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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