Micron Technology 16JTF51264HZ-1G6M1 4GB vs Samsung M378A2K43CB1-CTD 16GB

総合得点

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

総合得点

Samsung M378A2K43CB1-CTD 16GB

Samsung M378A2K43CB1-CTD 16GB

相違点仕様コメント

相違点

Micron Technology 16JTF51264HZ-1G6M1 4GB

考慮すべき理由
Micron Technology 16JTF51264HZ-1G6M1 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

28 33

周辺 15% 低遅延

Samsung M378A2K43CB1-CTD 16GB

考慮すべき理由
Samsung M378A2K43CB1-CTD 16GB

バグを報告する

読み出し速度の高速化、GB/s

16.2 12.9

テスト平均値
書き込み速度の高速化、GB/s

12.0 9.0

テスト平均値
より高いメモリ帯域幅、mbps

21300 12800

周辺 1.66 高帯域

仕様

技術仕様の完全リスト

Micron Technology 16JTF51264HZ-1G6M1 4GB

Samsung M378A2K43CB1-CTD 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

28 33
読み出し速度、GB/s

12.9 16.2
書き込み速度、GB/秒

9.0 12.0
メモリ帯域幅、mbps

12800 21300

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2112 3116

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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