Micron Technology 18HTF12872AY-800F1 1GB vs SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

総合得点

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

総合得点

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

相違点仕様コメント

相違点

Micron Technology 18HTF12872AY-800F1 1GB

考慮すべき理由
Micron Technology 18HTF12872AY-800F1 1GB

バグを報告する

読み出し速度の高速化、GB/s

4 14.2

テスト平均値
書き込み速度の高速化、GB/s

2,107.0 13.6

テスト平均値

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

考慮すべき理由
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

46 58

周辺 -26% 低遅延
より高いメモリ帯域幅、mbps

21300 6400

周辺 3.33 高帯域

仕様

技術仕様の完全リスト

Micron Technology 18HTF12872AY-800F1 1GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

58 46
読み出し速度、GB/s

4,025.3 14.2
書き込み速度、GB/秒

2,107.0 13.6
メモリ帯域幅、mbps

6400 21300

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

670 2717

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Crucial Technology BLS16G4D240FSC.16FAD 16GB

Crucial Technology BLS16G4D240FSC.16FAD 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Corsair CM4X8GE2666C16K4 8GB

Corsair CM4X8GE2666C16K4 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Golden Empire CL15-15-15 D4-2400 4GB

Golden Empire CL15-15-15 D4-2400 4GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Corsair CMK16GX4M1E3200C16 16GB

Corsair CMK16GX4M1E3200C16 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

G Skill Intl F4-2666C15-4GVK 4GB

G Skill Intl F4-2666C15-4GVK 4GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Kingston 9905701-008.A00G 16GB

Kingston 9905701-008.A00G 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Corsair CM4X8GE2400C15K4 8GB

Corsair CM4X8GE2400C15K4 8GB

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

Samsung M378A4G43MB1-CTD 32GB

Samsung M378A4G43MB1-CTD 32GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

G Skill Intl F4-2400C16-16GFX 16GB

G Skill Intl F4-2400C16-16GFX 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KHX2400C14S4/16G 16GB

Kingston KHX2400C14S4/16G 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3000C15-8GRK 8GB

G Skill Intl F4-3000C15-8GRK 8GB