Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

総合得点

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

総合得点

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

相違点仕様コメント

相違点

Micron Technology 8ATF2G64HZ-3G2E2 16GB

考慮すべき理由
Micron Technology 8ATF2G64HZ-3G2E2 16GB

バグを報告する

より高いメモリ帯域幅、mbps

25600 19200

周辺 1.33% 高帯域

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

考慮すべき理由
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

24 51

周辺 -113% 低遅延
書き込み速度の高速化、GB/s

12.1 11.8

テスト平均値

仕様

技術仕様の完全リスト

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

51 24
読み出し速度、GB/s

15.6 15.6
書き込み速度、GB/秒

11.8 12.1
メモリ帯域幅、mbps

25600 19200

Other

商品説明

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2687 2852

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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