Nanya Technology M2F4G64CB8HB9N-CG 4GB vs A-DATA Technology DDR4 3600 2OZ 8GB

総合得点

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

総合得点

A-DATA Technology DDR4 3600 2OZ 8GB

A-DATA Technology DDR4 3600 2OZ 8GB

相違点仕様コメント

相違点

Nanya Technology M2F4G64CB8HB9N-CG 4GB

考慮すべき理由
Nanya Technology M2F4G64CB8HB9N-CG 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

24 25

周辺 4% 低遅延

A-DATA Technology DDR4 3600 2OZ 8GB

考慮すべき理由
A-DATA Technology DDR4 3600 2OZ 8GB

バグを報告する

読み出し速度の高速化、GB/s

19 13.2

テスト平均値
書き込み速度の高速化、GB/s

14.9 8.8

テスト平均値
より高いメモリ帯域幅、mbps

21300 10600

周辺 2.01 高帯域

仕様

技術仕様の完全リスト

Nanya Technology M2F4G64CB8HB9N-CG 4GB

A-DATA Technology DDR4 3600 2OZ 8GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

24 25
読み出し速度、GB/s

13.2 19.0
書き込み速度、GB/秒

8.8 14.9
メモリ帯域幅、mbps

10600 21300

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2301 3683

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

A-DATA Technology DDR4 3600 2OZ 8GB

A-DATA Technology DDR4 3600 2OZ 8GB

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Ramaxel Technology RMR5030MM58E8F1600 2GB

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Micron Technology AFLD48EH1P 8GB

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Crucial Technology CT16G4SFD832A.C16FJ 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Crucial Technology CT16G4SFD824A.M16FD 16GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Kingston 9905700-072.A01G 16GB

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Kingston 9905471-002.A00LF 2GB

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Corsair CM4X32GC3200C16K2E 32GB