Nanya Technology M2S8G64CC8HB5N-DI 8GB vs Crucial Technology BLS16G4D240FSE.16FBR 16GB

総合得点

Nanya Technology M2S8G64CC8HB5N-DI 8GB

Nanya Technology M2S8G64CC8HB5N-DI 8GB

総合得点

Crucial Technology BLS16G4D240FSE.16FBR 16GB

Crucial Technology BLS16G4D240FSE.16FBR 16GB

相違点仕様コメント

相違点

Nanya Technology M2S8G64CC8HB5N-DI 8GB

考慮すべき理由
Nanya Technology M2S8G64CC8HB5N-DI 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

42 45

周辺 7% 低遅延

Crucial Technology BLS16G4D240FSE.16FBR 16GB

考慮すべき理由
Crucial Technology BLS16G4D240FSE.16FBR 16GB

バグを報告する

読み出し速度の高速化、GB/s

13.2 11.8

テスト平均値
書き込み速度の高速化、GB/s

12.2 7.7

テスト平均値
より高いメモリ帯域幅、mbps

19200 12800

周辺 1.5 高帯域

仕様

技術仕様の完全リスト

Nanya Technology M2S8G64CC8HB5N-DI 8GB

Crucial Technology BLS16G4D240FSE.16FBR 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

42 45
読み出し速度、GB/s

11.8 13.2
書き込み速度、GB/秒

7.7 12.2
メモリ帯域幅、mbps

12800 19200

Other

商品説明

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
タイミング / クロック速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2075 2841

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Nanya Technology M2S8G64CC8HB5N-DI 8GB

Nanya Technology M2S8G64CC8HB5N-DI 8GB

Crucial Technology BLS16G4D240FSE.16FBR 16GB

Crucial Technology BLS16G4D240FSE.16FBR 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

G Skill Intl F4-4000C18-16GTRS 16GB

G Skill Intl F4-4000C18-16GTRS 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

SpecTek Incorporated 16G 2666 CL 19 16GB

SpecTek Incorporated 16G 2666 CL 19 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology BLS16G4D240FSE.16FBR 16GB

Crucial Technology BLS16G4D240FSE.16FBR 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Samsung SF4721G4CKHH6DFSDS 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Samsung M471A2K43BB1-CTD 16GB

Samsung M471A2K43BB1-CTD 16GB

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Kingston 9905403-444.A00LF 4GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

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Crucial Technology CT4G4DFS824A.C8FADP 4GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

G Skill Intl F4-4000C18-8GTRG 8GB

G Skill Intl F4-4000C18-8GTRG 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Corsair CMK64GX4M2D3000C16 32GB

Corsair CMK64GX4M2D3000C16 32GB

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G Skill Intl F4-2133C15-4GVR 4GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Corsair CMK16GX4M2B2800C14 8GB

Corsair CMK16GX4M2B2800C14 8GB