Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

総合得点

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

総合得点

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

相違点仕様コメント

相違点

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

考慮すべき理由
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

35 71

周辺 51% 低遅延
書き込み速度の高速化、GB/s

9.6 8.3

テスト平均値

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

考慮すべき理由
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

バグを報告する

読み出し速度の高速化、GB/s

15.5 13.7

テスト平均値
より高いメモリ帯域幅、mbps

19200 12800

周辺 1.5 高帯域

仕様

技術仕様の完全リスト

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

35 71
読み出し速度、GB/s

13.7 15.5
書き込み速度、GB/秒

9.6 8.3
メモリ帯域幅、mbps

12800 19200

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
タイミング / クロック速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2312 1902

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Transcend Information TS2GLH64V6B 16GB

Transcend Information TS2GLH64V6B 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-2400C17-8GSXK 8GB

G Skill Intl F4-2400C17-8GSXK 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Kingston HP32D4S2S1ME-4 4GB

Kingston HP32D4S2S1ME-4 4GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

A-DATA Technology DDR4 2666 2OZ 4GB

A-DATA Technology DDR4 2666 2OZ 4GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Crucial Technology CT32G4SFD8266.C16FB 32GB

Crucial Technology CT32G4SFD8266.C16FB 32GB

Kingston HP32D4S2S1ME-4 4GB

Kingston HP32D4S2S1ME-4 4GB

Crucial Technology CT8G4DFS824A.M8FGM 8GB

Crucial Technology CT8G4DFS824A.M8FGM 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Patriot Memory (PDP Systems) 3600 C16 Series 8GB

Patriot Memory (PDP Systems) 3600 C16 Series 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

DSL Memory CIR-W4SUSS2408G 8GB

DSL Memory CIR-W4SUSS2408G 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingston ACR26D4U9S8MH-8 8GB

Kingston ACR26D4U9S8MH-8 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Essencore Limited KD48GU881-26N190D 8GB

Essencore Limited KD48GU881-26N190D 8GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB