PNY Electronics PNY 2GB vs Micron Technology 8ATF51264HZ-2G1A2 4GB

総合得点

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

総合得点

Micron Technology 8ATF51264HZ-2G1A2 4GB

Micron Technology 8ATF51264HZ-2G1A2 4GB

相違点仕様コメント

相違点

PNY Electronics PNY 2GB

考慮すべき理由
PNY Electronics PNY 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 36

周辺 25% 低遅延
読み出し速度の高速化、GB/s

13.8 13.6

テスト平均値

Micron Technology 8ATF51264HZ-2G1A2 4GB

考慮すべき理由
Micron Technology 8ATF51264HZ-2G1A2 4GB

バグを報告する

書き込み速度の高速化、GB/s

9.0 8.4

テスト平均値
より高いメモリ帯域幅、mbps

17000 10600

周辺 1.6 高帯域

仕様

技術仕様の完全リスト

PNY Electronics PNY 2GB

Micron Technology 8ATF51264HZ-2G1A2 4GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

27 36
読み出し速度、GB/s

13.8 13.6
書き込み速度、GB/秒

8.4 9.0
メモリ帯域幅、mbps

10600 17000

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
タイミング / クロック速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2274 1778

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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