Samsung M3 78T2863EHS-CF7 1GB vs Micron Technology 16ATF2G64HZ-3G2E1 16GB

総合得点

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

総合得点

Micron Technology 16ATF2G64HZ-3G2E1 16GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

相違点仕様コメント

相違点

Samsung M3 78T2863EHS-CF7 1GB

考慮すべき理由
Samsung M3 78T2863EHS-CF7 1GB

バグを報告する

読み出し速度の高速化、GB/s

4 16.7

テスト平均値
書き込み速度の高速化、GB/s

2,123.3 15.1

テスト平均値

Micron Technology 16ATF2G64HZ-3G2E1 16GB

考慮すべき理由
Micron Technology 16ATF2G64HZ-3G2E1 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

35 59

周辺 -69% 低遅延
より高いメモリ帯域幅、mbps

25600 6400

周辺 4 高帯域

仕様

技術仕様の完全リスト

Samsung M3 78T2863EHS-CF7 1GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

59 35
読み出し速度、GB/s

4,833.8 16.7
書き込み速度、GB/秒

2,123.3 15.1
メモリ帯域幅、mbps

6400 25600

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
タイミング / クロック速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
ランキングPassMark（多ければ多いほど良い）

731 3191

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology BLS16G4D32AEST.M16FE 16GB

Crucial Technology BLS16G4D32AEST.M16FE 16GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Avant Technology J641GU49J2320NE 8GB

Avant Technology J641GU49J2320NE 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

SK Hynix HMA84GR7AFR4N-UH 32GB

SK Hynix HMA84GR7AFR4N-UH 32GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingston ACR24D4U7S8MB-8 8GB

Kingston ACR24D4U7S8MB-8 8GB

A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology BLS16G4D26BFST.16FD 16GB

Crucial Technology BLS16G4D26BFST.16FD 16GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

G Skill Intl F4-4266C17-16GTZRB 16GB

G Skill Intl F4-4266C17-16GTZRB 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Apacer Technology 78.BAGSR.4030B 4GB

Apacer Technology 78.BAGSR.4030B 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMH128GX4M4E3200C16 32GB

Corsair CMH128GX4M4E3200C16 32GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston 9965589-033.D00G 8GB

Kingston 9965589-033.D00G 8GB

Crucial Technology CT51264BF160BJ.C8F 4GB

Crucial Technology CT51264BF160BJ.C8F 4GB

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-4000C15-8GTRS 8GB

G Skill Intl F4-4000C15-8GTRS 8GB