Samsung M3 78T2953EZ3-CF7 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

総合得点

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

相違点仕様コメント

相違点

Samsung M3 78T2953EZ3-CF7 1GB

考慮すべき理由
Samsung M3 78T2953EZ3-CF7 1GB

バグを報告する

読み出し速度の高速化、GB/s

4 17.5

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

23 58

周辺 -152% 低遅延
書き込み速度の高速化、GB/s

14.6 1,950.7

テスト平均値
より高いメモリ帯域幅、mbps

21300 6400

周辺 3.33 高帯域

仕様

技術仕様の完全リスト

Samsung M3 78T2953EZ3-CF7 1GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

58 23
読み出し速度、GB/s

4,241.0 17.5
書き込み速度、GB/秒

1,950.7 14.6
メモリ帯域幅、mbps

6400 21300

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

651 3260

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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