Samsung M3 78T3354BZ0-CCC 256MB vs Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

総合得点

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

相違点仕様コメント

相違点

Samsung M3 78T3354BZ0-CCC 256MB

考慮すべき理由
Samsung M3 78T3354BZ0-CCC 256MB

バグを報告する

読み出し速度の高速化、GB/s

2 15.6

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 46

周辺 -70% 低遅延
書き込み速度の高速化、GB/s

11.3 1,519.2

テスト平均値
より高いメモリ帯域幅、mbps

17000 3200

周辺 5.31 高帯域

仕様

技術仕様の完全リスト

Samsung M3 78T3354BZ0-CCC 256MB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

46 27
読み出し速度、GB/s

2,909.8 15.6
書き込み速度、GB/秒

1,519.2 11.3
メモリ帯域幅、mbps

3200 17000

Other

商品説明

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
タイミング / クロック速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

241 2687

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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