Samsung M3 78T3354BZ0-CCC 256MB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

総合得点

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

相違点仕様コメント

相違点

Samsung M3 78T3354BZ0-CCC 256MB

考慮すべき理由
Samsung M3 78T3354BZ0-CCC 256MB

バグを報告する

読み出し速度の高速化、GB/s

2 13.5

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

29 46

周辺 -59% 低遅延
書き込み速度の高速化、GB/s

10.2 1,519.2

テスト平均値
より高いメモリ帯域幅、mbps

19200 3200

周辺 6 高帯域

仕様

技術仕様の完全リスト

Samsung M3 78T3354BZ0-CCC 256MB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

46 29
読み出し速度、GB/s

2,909.8 13.5
書き込み速度、GB/秒

1,519.2 10.2
メモリ帯域幅、mbps

3200 19200

Other

商品説明

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

241 2088

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-3600C14-8GTZNB 8GB

G Skill Intl F4-3600C14-8GTZNB 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

G Skill Intl F4-2666C18-4GRS 4GB

G Skill Intl F4-2666C18-4GRS 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Team Group Inc. TEAMGROUP-UD4-2666 8GB

Team Group Inc. TEAMGROUP-UD4-2666 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7CFR4C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7CFR4C

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT16G4SFD8213.C16FDD 16GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMK16GX4M2A2666C16 8GB

Corsair CMK16GX4M2A2666C16 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BL16G32C16U4W.M16FE1 16GB

Crucial Technology BL16G32C16U4W.M16FE1 16GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

A-DATA Technology DDR4 3600 8GB

A-DATA Technology DDR4 3600 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

V-Color Technology Inc. TA48G32S816SK 8GB

V-Color Technology Inc. TA48G32S816SK 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingston KVR26N19D8/16 16GB

Kingston KVR26N19D8/16 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Corsair CM4B8G4J2400A16K2-ON 8GB

Corsair CM4B8G4J2400A16K2-ON 8GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Kingmax Semiconductor GSAG42F-18---------- 8GB

Kingmax Semiconductor GSAG42F-18---------- 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-2666C15-4GRR 4GB

G Skill Intl F4-2666C15-4GRR 4GB