Samsung M3 78T3354BZ0-CCC 256MB vs InnoDisk Corporation M4S0-AGS1O5IK 16GB

総合得点

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

総合得点

InnoDisk Corporation M4S0-AGS1O5IK 16GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB

相違点仕様コメント

相違点

Samsung M3 78T3354BZ0-CCC 256MB

考慮すべき理由
Samsung M3 78T3354BZ0-CCC 256MB

バグを報告する

読み出し速度の高速化、GB/s

2 13.1

テスト平均値

InnoDisk Corporation M4S0-AGS1O5IK 16GB

考慮すべき理由
InnoDisk Corporation M4S0-AGS1O5IK 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

42 46

周辺 -10% 低遅延
書き込み速度の高速化、GB/s

11.5 1,519.2

テスト平均値
より高いメモリ帯域幅、mbps

21300 3200

周辺 6.66 高帯域

仕様

技術仕様の完全リスト

Samsung M3 78T3354BZ0-CCC 256MB

InnoDisk Corporation M4S0-AGS1O5IK 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

46 42
読み出し速度、GB/s

2,909.8 13.1
書き込み速度、GB/秒

1,519.2 11.5
メモリ帯域幅、mbps

3200 21300

Other

商品説明

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

3-3-3-12 / 400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

241 2525

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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