Samsung M3 78T5663EH3-CF7 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

総合得点

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

相違点仕様コメント

相違点

Samsung M3 78T5663EH3-CF7 2GB

考慮すべき理由
Samsung M3 78T5663EH3-CF7 2GB

バグを報告する

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

36 65

周辺 -81% 低遅延
読み出し速度の高速化、GB/s

9.3 4

テスト平均値
書き込み速度の高速化、GB/s

7.0 2,451.8

テスト平均値
より高いメモリ帯域幅、mbps

19200 6400

周辺 3 高帯域

仕様

技術仕様の完全リスト

Samsung M3 78T5663EH3-CF7 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

65 36
読み出し速度、GB/s

4,605.9 9.3
書き込み速度、GB/秒

2,451.8 7.0
メモリ帯域幅、mbps

6400 19200

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

878 1891

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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