Samsung M3 78T5663RZ3-CF7 2GB vs Chun Well Technology Holding Limited D4U0830160B 8GB

総合得点

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

総合得点

Chun Well Technology Holding Limited D4U0830160B 8GB

Chun Well Technology Holding Limited D4U0830160B 8GB

相違点仕様コメント

相違点

Samsung M3 78T5663RZ3-CF7 2GB

考慮すべき理由
Samsung M3 78T5663RZ3-CF7 2GB

バグを報告する

読み出し速度の高速化、GB/s

4 17.4

テスト平均値
書き込み速度の高速化、GB/s

2,784.6 12.5

テスト平均値

Chun Well Technology Holding Limited D4U0830160B 8GB

考慮すべき理由
Chun Well Technology Holding Limited D4U0830160B 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

32 65

周辺 -103% 低遅延
より高いメモリ帯域幅、mbps

21300 6400

周辺 3.33 高帯域

仕様

技術仕様の完全リスト

Samsung M3 78T5663RZ3-CF7 2GB

Chun Well Technology Holding Limited D4U0830160B 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

65 32
読み出し速度、GB/s

4,806.8 17.4
書き込み速度、GB/秒

2,784.6 12.5
メモリ帯域幅、mbps

6400 21300

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

932 3137

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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