Samsung M3 93T5750CZA-CE6 2GB vs Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

総合得点

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

総合得点

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

相違点仕様コメント

相違点

Samsung M3 93T5750CZA-CE6 2GB

考慮すべき理由
Samsung M3 93T5750CZA-CE6 2GB

バグを報告する

読み出し速度の高速化、GB/s

3 14.5

テスト平均値

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

考慮すべき理由
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

71 77

周辺 -8% 低遅延
書き込み速度の高速化、GB/s

8.0 2,622.0

テスト平均値
より高いメモリ帯域幅、mbps

21300 5300

周辺 4.02 高帯域

仕様

技術仕様の完全リスト

Samsung M3 93T5750CZA-CE6 2GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

77 71
読み出し速度、GB/s

3,405.2 14.5
書き込み速度、GB/秒

2,622.0 8.0
メモリ帯域幅、mbps

5300 21300

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

763 1863

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Corsair CMSX32GX4M2A3000C18 16GB

Corsair CMSX32GX4M2A3000C18 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-2133C15-8GRR2 8GB

G Skill Intl F4-2133C15-8GRR2 8GB

Unifosa Corporation GU502203EP0201 1GB

Unifosa Corporation GU502203EP0201 1GB

SK Hynix HMA81GU6MFR8N-UH 8GB

SK Hynix HMA81GU6MFR8N-UH 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT4G4DFS8213.C8FBR2 4GB

Crucial Technology CT4G4DFS8213.C8FBR2 4GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

ISD Technology Limited IM48GU48N21-FFFHM 8GB

ISD Technology Limited IM48GU48N21-FFFHM 8GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CB4GU2400.M8E 4GB

Crucial Technology CB4GU2400.M8E 4GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

A-DATA Technology DDR4 3200 8GB

A-DATA Technology DDR4 3200 8GB

Crucial Technology CT2K102464BD160B 8GB

Crucial Technology CT2K102464BD160B 8GB

Corsair CMD8GX4M2B3466C18 4GB

Corsair CMD8GX4M2B3466C18 4GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLS16G4D240FSE.16FBD 16GB

Crucial Technology BLS16G4D240FSE.16FBD 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

A-DATA Technology AD4U240038G17-BHYA 8GB

A-DATA Technology AD4U240038G17-BHYA 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Ramaxel Technology RMSA3270MB76H8F2400 2GB

Ramaxel Technology RMSA3270MB76H8F2400 2GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

G Skill Intl F4-3000C14-8GVR 8GB

G Skill Intl F4-3000C14-8GVR 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3000C16-16GTRS 16GB

G Skill Intl F4-3000C16-16GTRS 16GB