Samsung M378B1G73QH0-CK0 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

総合得点

Samsung M378B1G73QH0-CK0 8GB

Samsung M378B1G73QH0-CK0 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

相違点仕様コメント

相違点

Samsung M378B1G73QH0-CK0 8GB

考慮すべき理由
Samsung M378B1G73QH0-CK0 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

42 122

周辺 66% 低遅延
読み出し速度の高速化、GB/s

13.6 9.4

テスト平均値
書き込み速度の高速化、GB/s

8.4 5.8

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

バグを報告する

より高いメモリ帯域幅、mbps

19200 12800

周辺 1.5 高帯域

仕様

技術仕様の完全リスト

Samsung M378B1G73QH0-CK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

42 122
読み出し速度、GB/s

13.6 9.4
書き込み速度、GB/秒

8.4 5.8
メモリ帯域幅、mbps

12800 19200

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2292 1411

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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