Samsung M378B5273CH0-CH9 4GB vs Micron Technology 16ATF4G64HZ-2G6B2 32GB

総合得点

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

総合得点

Micron Technology 16ATF4G64HZ-2G6B2 32GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

相違点仕様コメント

相違点

Samsung M378B5273CH0-CH9 4GB

考慮すべき理由
Samsung M378B5273CH0-CH9 4GB

バグを報告する

Micron Technology 16ATF4G64HZ-2G6B2 32GB

考慮すべき理由
Micron Technology 16ATF4G64HZ-2G6B2 32GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

35 37

周辺 -6% 低遅延
読み出し速度の高速化、GB/s

15.4 13.2

テスト平均値
書き込み速度の高速化、GB/s

11.8 8.4

テスト平均値
より高いメモリ帯域幅、mbps

21300 10600

周辺 2.01 高帯域

仕様

技術仕様の完全リスト

Samsung M378B5273CH0-CH9 4GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

37 35
読み出し速度、GB/s

13.2 15.4
書き込み速度、GB/秒

8.4 11.8
メモリ帯域幅、mbps

10600 21300

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
タイミング / クロック速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2143 2926

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CM4X16GE2666C16K8 16GB

Corsair CM4X16GE2666C16K8 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-2666C19-8GIS 8GB

G Skill Intl F4-2666C19-8GIS 8GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Teikon TMA81GU6AFR8N-UHSC 8GB

Teikon TMA81GU6AFR8N-UHSC 8GB

SpecTek Incorporated PSD34G13332 4GB

SpecTek Incorporated PSD34G13332 4GB

Crucial Technology CT8G4SFD8213.C16FBD2 8GB

Crucial Technology CT8G4SFD8213.C16FBD2 8GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M393A1G43EB1-CRC 8GB

Samsung M393A1G43EB1-CRC 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Transcend Information JM2666HLB-8G 8GB

Transcend Information JM2666HLB-8G 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMSX64GX4M2A2666C18 32GB

Corsair CMSX64GX4M2A2666C18 32GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CM4X16GE2666C16K8 16GB

Corsair CM4X16GE2666C16K8 16GB