Samsung M378B5673EH1-CF8 2GB vs Apacer Technology 78.B2GC9.CY10C 4GB

総合得点

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

総合得点

Apacer Technology 78.B2GC9.CY10C 4GB

Apacer Technology 78.B2GC9.CY10C 4GB

相違点仕様コメント

相違点

Samsung M378B5673EH1-CF8 2GB

考慮すべき理由
Samsung M378B5673EH1-CF8 2GB

バグを報告する

読み出し速度の高速化、GB/s

12.7 9

テスト平均値
書き込み速度の高速化、GB/s

7.5 4.3

テスト平均値

Apacer Technology 78.B2GC9.CY10C 4GB

考慮すべき理由
Apacer Technology 78.B2GC9.CY10C 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 28

周辺 -4% 低遅延
より高いメモリ帯域幅、mbps

10600 8500

周辺 1.25 高帯域

仕様

技術仕様の完全リスト

Samsung M378B5673EH1-CF8 2GB

Apacer Technology 78.B2GC9.CY10C 4GB

主な特徴

メモリータイプ

DDR3 DDR3
PassMarkにおけるレイテンシー、ns

28 27
読み出し速度、GB/s

12.7 9.0
書き込み速度、GB/秒

7.5 4.3
メモリ帯域幅、mbps

8500 10600

Other

商品説明

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
タイミング / クロック速度

7-7-7-20 / 1066 MHz 7-7-7-20 / 1333 MHz
ランキングPassMark（多ければ多いほど良い）

1988 1333

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CMK128GX4M8A2666C16 16GB

Corsair CMK128GX4M8A2666C16 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

G Skill Intl F4-3200C14-16GTZSW 16GB

G Skill Intl F4-3200C14-16GTZSW 16GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

G Skill Intl F4-3600C16-8GVKC 8GB

G Skill Intl F4-3600C16-8GVKC 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

G Skill Intl F4-3600C14-8GTRGB 8GB

G Skill Intl F4-3600C14-8GTRGB 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Crucial Technology CT16G4SFD824A.M16FB 16GB

Crucial Technology CT16G4SFD824A.M16FB 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Apacer Technology 78.B2GC9.CY10C 4GB

Apacer Technology 78.B2GC9.CY10C 4GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Patriot Memory (PDP Systems) PSD48G213381 8GB

Patriot Memory (PDP Systems) PSD48G213381 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Wilk Elektronik S.A. GR2400S464L17/16G 16GB

Wilk Elektronik S.A. GR2400S464L17/16G 16GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Kingston 9905665-023.A00G 4GB

Kingston 9905665-023.A00G 4GB

Ramaxel Technology RMN1740HC48D8F667A 2GB

Ramaxel Technology RMN1740HC48D8F667A 2GB

Corsair CMU32GX4M4C3200C16 8GB

Corsair CMU32GX4M4C3200C16 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Apacer Technology 78.C1GQ5.C7C0B 8GB

Apacer Technology 78.C1GQ5.C7C0B 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Crucial Technology CT16G4DFS8266.C8FE 16GB

Crucial Technology CT16G4DFS8266.C8FE 16GB