Samsung M391B5673EH1-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

総合得点

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

相違点仕様コメント

相違点

Samsung M391B5673EH1-CH9 2GB

考慮すべき理由
Samsung M391B5673EH1-CH9 2GB

バグを報告する

書き込み速度の高速化、GB/s

9.0 8.9

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

25 26

周辺 -4% 低遅延
読み出し速度の高速化、GB/s

14.8 12.8

テスト平均値
より高いメモリ帯域幅、mbps

17000 10600

周辺 1.6 高帯域

仕様

技術仕様の完全リスト

Samsung M391B5673EH1-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

26 25
読み出し速度、GB/s

12.8 14.8
書き込み速度、GB/秒

9.0 8.9
メモリ帯域幅、mbps

10600 17000

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
タイミング / クロック速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2143 2542

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Kingston KH2400C15D4/8 8GB

Kingston KH2400C15D4/8 8GB

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CMK16GX4M4B3333C16 4GB

Corsair CMK16GX4M4B3333C16 4GB

G Skill Intl F3-14900CL9-4GBZL 4GB

G Skill Intl F3-14900CL9-4GBZL 4GB

G Skill Intl F3-1600C11-4GIS 4GB

G Skill Intl F3-1600C11-4GIS 4GB

Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

Corsair CMK32GX4M4B3200C16 8GB

Corsair CMK32GX4M4B3200C16 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Kllisre 8ATF1G64AZ-2G6H1 8GB

Kllisre 8ATF1G64AZ-2G6H1 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Kingston KF3200C20S4/32GX 32MB

Kingston KF3200C20S4/32GX 32MB

Elpida EBJ41UF8BDW0-GN-F 4GB

Elpida EBJ41UF8BDW0-GN-F 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Kingston 9905624-023.A00G 8GB

Kingston 9905624-023.A00G 8GB