Samsung M391B5673EH1-CH9 2GB vs Micron Technology 16ATF2G64HZ-2G3H1 16GB

総合得点

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

総合得点

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

相違点仕様コメント

相違点

Samsung M391B5673EH1-CH9 2GB

考慮すべき理由
Samsung M391B5673EH1-CH9 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

26 41

周辺 37% 低遅延

Micron Technology 16ATF2G64HZ-2G3H1 16GB

考慮すべき理由
Micron Technology 16ATF2G64HZ-2G3H1 16GB

バグを報告する

書き込み速度の高速化、GB/s

9.2 9.0

テスト平均値
より高いメモリ帯域幅、mbps

19200 10600

周辺 1.81 高帯域

仕様

技術仕様の完全リスト

Samsung M391B5673EH1-CH9 2GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

26 41
読み出し速度、GB/s

12.8 12.8
書き込み速度、GB/秒

9.0 9.2
メモリ帯域幅、mbps

10600 19200

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
タイミング / クロック速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2143 2238

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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