Samsung M393B5170FH0-CK0 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

総合得点

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

相違点仕様コメント

相違点

Samsung M393B5170FH0-CK0 4GB

考慮すべき理由
Samsung M393B5170FH0-CK0 4GB

バグを報告する

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

バグを報告する

読み出し速度の高速化、GB/s

15.6 11.8

テスト平均値
書き込み速度の高速化、GB/s

11.3 7.3

テスト平均値
より高いメモリ帯域幅、mbps

17000 12800

周辺 1.33 高帯域

仕様

技術仕様の完全リスト

Samsung M393B5170FH0-CK0 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

27 27
読み出し速度、GB/s

11.8 15.6
書き込み速度、GB/秒

7.3 11.3
メモリ帯域幅、mbps

12800 17000

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
タイミング / クロック速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2057 2687

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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