Samsung M4 70T2864QZ3-CF7 1GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

総合得点

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

総合得点

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

相違点仕様コメント

相違点

Samsung M4 70T2864QZ3-CF7 1GB

考慮すべき理由
Samsung M4 70T2864QZ3-CF7 1GB

バグを報告する

読み出し速度の高速化、GB/s

4 16

テスト平均値
書き込み速度の高速化、GB/s

2,201.1 12.6

テスト平均値

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

考慮すべき理由
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

37 74

周辺 -100% 低遅延
より高いメモリ帯域幅、mbps

19200 6400

周辺 3 高帯域

仕様

技術仕様の完全リスト

Samsung M4 70T2864QZ3-CF7 1GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

74 37
読み出し速度、GB/s

4,178.4 16.0
書き込み速度、GB/秒

2,201.1 12.6
メモリ帯域幅、mbps

6400 19200

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

508 2808

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

CAS Latency (CL) *

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Absolute Latency

0 ns

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