Samsung M4 70T2953EZ3-CE6 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

総合得点

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

相違点仕様コメント

相違点

Samsung M4 70T2953EZ3-CE6 1GB

考慮すべき理由
Samsung M4 70T2953EZ3-CE6 1GB

バグを報告する

読み出し速度の高速化、GB/s

3 11.6

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

33 73

周辺 -121% 低遅延
書き込み速度の高速化、GB/s

8.3 1,423.3

テスト平均値
より高いメモリ帯域幅、mbps

19200 5300

周辺 3.62 高帯域

仕様

技術仕様の完全リスト

Samsung M4 70T2953EZ3-CE6 1GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

73 33
読み出し速度、GB/s

3,510.5 11.6
書き込み速度、GB/秒

1,423.3 8.3
メモリ帯域幅、mbps

5300 19200

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

476 2227

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT32G4DFD832A.C16FE 32GB

Crucial Technology CT32G4DFD832A.C16FE 32GB

Kingston 99U5429-014.A00LF 4GB

Kingston 99U5429-014.A00LF 4GB

Crucial Technology BLS8G4D26BFSC.16FBD2 8GB

Crucial Technology BLS8G4D26BFSC.16FBD2 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Micron Technology 18ASF1G72PZ-2G1B1 8GB

Micron Technology 18ASF1G72PZ-2G1B1 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Crucial Technology BL8G32C16U4W.M8FE1 8GB

Crucial Technology BL8G32C16U4W.M8FE1 8GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Gloway International (HK) STK4U2400D17082C 8GB

Gloway International (HK) STK4U2400D17082C 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Kingston HP26D4S9S8MD-8 8GB

Kingston HP26D4S9S8MD-8 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Samsung M378A2K43DB1-CTD 16GB

Samsung M378A2K43DB1-CTD 16GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

G Skill Intl F4-3200C16-16GTZSK 16GB

G Skill Intl F4-3200C16-16GTZSK 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

Mushkin 99[2/7/4]197F 8GB

Mushkin 99[2/7/4]197F 8GB