Samsung M4 70T2953EZ3-CE6 1GB vs Micron Technology 18ASF2G72AZ-2G1A1 16GB

総合得点

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

総合得点

Micron Technology 18ASF2G72AZ-2G1A1 16GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB

相違点仕様コメント

相違点

Samsung M4 70T2953EZ3-CE6 1GB

考慮すべき理由
Samsung M4 70T2953EZ3-CE6 1GB

バグを報告する

読み出し速度の高速化、GB/s

3 11.7

テスト平均値

Micron Technology 18ASF2G72AZ-2G1A1 16GB

考慮すべき理由
Micron Technology 18ASF2G72AZ-2G1A1 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

31 73

周辺 -135% 低遅延
書き込み速度の高速化、GB/s

7.7 1,423.3

テスト平均値
より高いメモリ帯域幅、mbps

17000 5300

周辺 3.21 高帯域

仕様

技術仕様の完全リスト

Samsung M4 70T2953EZ3-CE6 1GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

73 31
読み出し速度、GB/s

3,510.5 11.7
書き込み速度、GB/秒

1,423.3 7.7
メモリ帯域幅、mbps

5300 17000

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
タイミング / クロック速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

476 1997

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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