Samsung M4 70T2953EZ3-CE6 1GB vs V-GEN D4R8GL24A8R 8GB

総合得点

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

総合得点

V-GEN D4R8GL24A8R 8GB

V-GEN D4R8GL24A8R 8GB

相違点仕様コメント

相違点

Samsung M4 70T2953EZ3-CE6 1GB

考慮すべき理由
Samsung M4 70T2953EZ3-CE6 1GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

73 77

周辺 5% 低遅延
読み出し速度の高速化、GB/s

3 15.5

テスト平均値

V-GEN D4R8GL24A8R 8GB

考慮すべき理由
V-GEN D4R8GL24A8R 8GB

バグを報告する

書き込み速度の高速化、GB/s

8.2 1,423.3

テスト平均値
より高いメモリ帯域幅、mbps

19200 5300

周辺 3.62 高帯域

仕様

技術仕様の完全リスト

Samsung M4 70T2953EZ3-CE6 1GB

V-GEN D4R8GL24A8R 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

73 77
読み出し速度、GB/s

3,510.5 15.5
書き込み速度、GB/秒

1,423.3 8.2
メモリ帯域幅、mbps

5300 19200

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

476 1809

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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