Samsung M4 70T2953EZ3-CE6 1GB vs V-GEN D4R8GL24A8R 8GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

V-GEN D4R8GL24A8R 8GB

V-GEN D4R8GL24A8R 8GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

低于PassMark测试中的延时，ns

73 77

左右 5% 更低的延时
更快的读取速度，GB/s

3 15.5

测试中的平均数值

V-GEN D4R8GL24A8R 8GB

需要考虑的原因
V-GEN D4R8GL24A8R 8GB

报告一个错误

更快的写入速度，GB/s

8.2 1,423.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

V-GEN D4R8GL24A8R 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 77
读取速度，GB/s

3,510.5 15.5
写入速度，GB/s

1,423.3 8.2
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

476 1809

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Kingston MSI26D4S9S8HJ-8 8GB

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G Skill Intl F3-1333C9-4GIS 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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A-DATA Technology AO1P32NC8W1-BDAS 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Kingston KHX2133C14S4/8G 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Corsair CMK32GX4M2Z3600C18 16GB

Corsair CMK32GX4M2Z3600C18 16GB

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Kingston CBD24D4S7D8MA-16 16GB

Kingston CBD24D4S7D8MA-16 16GB

Qimonda 72T128420EFA3SB2 1GB

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Apacer Technology D12.2356WS.001 8GB

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G Skill Intl F3-14900CL10-8GBXL 8GB

G Skill Intl F3-14900CL10-8GBXL 8GB

Crucial Technology CT8G4SFRA32A.C8FE 8GB

Crucial Technology CT8G4SFRA32A.C8FE 8GB